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Program Area of Interest 1: High efficiency visible and
near UV (>380 nm) semiconductor materials for LED based general
illumination technology

Published on AidPage by IDILOGIC on Jun 24, 2005
Administered by:

Department of Energy, All Departmental Locations, All DOE Federal Offices
(see all US Federal Agencies)

Explore all postings for this grant program:
  • Original Grant - Feb 26, 2004
Applications Due:

Apr 15, 2004

total funding: Not Available
max award: none
min award: none
cost sharing, matching: Yes
number of awards: Not Available
type of funding: Cooperative Agreement
Description:

Area of Interest 1: High efficiency visible and
near UV (>380 nm)
semiconductor materials for LED based general illumination technology

Current nitride compound semiconductors are incapable of achieving the
price
and performance targets that are competitive in general illumination
applications for a variety of reasons. While significant improvements have

been made, today?s products are not able to meet these requirements
primarily
due to limitations in materials and packaging. Also, a complete basic
understanding of how material quality ultimately affects device performance
is
still lacking. Significant advancements in the basic materials technology
associated with visible and near UV LEDs are required to advance
performance
characteristics of current devices beyond their present limitations of 50
to 80
LPW. These advancements must not only produce the substantial gains in the

light production efficiency required, but must also address the significant

costs normally associated with the complex and labor intensive epitaxial
growth
required to produce these devices. Applied research in conventional nitride

systems and exploration of novel material systems is necessary to produce
the
efficient materials system(s) required for general illumination challenges.

Improvements by several orders of magnitude to the price and performance of

these devices are vital to make them practical solutions. Also,
advancements
in P-doping efficiency and novel charge introduction structures may produce

significant fundamental advancements in existing materials systems.
Advancements in high purity process materials and growth structures may
also
significantly improve device performance by limiting photon inhibiting
processes thought to be associated with defects, dislocations, and other
crystalline artifacts.

Please read the Master Funding Opportunity Announcement for complete
details on
evaluation criteria and how to prepare your application:

Who can apply:

Unrestricted

Eligible functional categories:
Funding Sources:

Conservation Research and Development

More Information:

Click

here to view the Opportunity

If you have problems accessing the full announcement, please contact: Raymond Jarr
If you have problems accessing the full announcement, please contact: using this
link

Address Info:

3610 Collins Ferry Road (MS-I07) P.O. Box 880
Morgantown, WV 26507-0880

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